? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( limited by leads) 75 a i c110 t c = 110c 48 a i cm t c = 25c, 1ms 250 a i a t c = 25c 30 a e as t c = 25c 300 mj ssoa v ge = 15v, t vj = 125c, r g = 3 i cm = 100 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247&to-220) 1.13/10 nm/lb.in. weight to-247 6.0 g to-220 3.0 g to-263 2.5 g ds99953a(01/09) ixga48n60c3 IXGH48N60C3 ixgp48n60c3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces 25 a v ge = 0v t j = 125c 250 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 2.3 2.5 v t j = 125c 1.8 v v ces = 600v i c110 = 48a v ce(sat) 2.5v t fi(typ) = 38ns genx3 tm 600v igbt high speed pt igbts for 40-100khz switching features z optimized for low switching losses z square rbsoa z avalanche rated z fast switching z international standard packages advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts g = gate c = collector e = emitter tab = collector to-220 (ixgp) to-263 (ixga) g e to-247 (ixgh) (tab) g c e (tab) g e c (tab)
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60c3 IXGH48N60C3 ixgp48n60c3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 20 30 s c ies 1960 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 207 pf c res 66 pf q g 77 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 16 nc q gc 32 nc t d(on) 19 ns t ri 26 ns e on 0.41 mj t d(off) 60 100 ns t fi 38 ns e off 0.23 0.42 mj t d(on) 19 ns t ri 26 ns e on 0.65 mj t d(off) 92 ns t fi 95 ns e off 0.57 mj r thjc 0.42 c/w r thcs (to-247) 0.21 c/w (to-220) 0.50 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixgp) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 3 to-263 (ixga) outline inductive load, t j = 125c i c = 30a, v ge = 15v v ce = 400v, r g = 3
? 2009 ixys corporation, all rights reserved ixga48n60c3 IXGH48N60C3 ixgp48n60c3 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0 2 4 6 8 101214161820 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 15a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 60a 30a 15a t j = 25oc fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 v ge - volts i c - amperes t j = -125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60c3 IXGH48N60C3 ixgp48n60c3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 102030405060708090100110120 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 300v i c = 30a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_48n60c3(5d)1-23-09-b
? 2009 ixys corporation, all rights reserved ixga48n60c3 IXGH48N60C3 ixgp48n60c3 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 5 10 15 20 25 30 35 r g - ohms e off - millijoules 0.2 0.6 1.0 1.4 1.8 2.2 2.6 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 60a i c = 30a i c = 15a fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 60 70 80 90 100 110 120 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 15a i c = 60a i c = 30a fig. 15. inductive turn-off switching times vs. gate resistance 70 75 80 85 90 95 100 105 110 115 120 125 130 0 5 10 15 20 25 30 35 r g - ohms t f - nanoseconds 50 75 100 125 150 175 200 225 250 275 300 325 350 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 30a i c = 15a i c = 60a fig. 13. inductive swiching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 125oc, 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 60a i c = 30a i c = 15a fig. 16. inductive turn-off switching times vs. collector current 20 30 40 50 60 70 80 90 100 110 120 130 140 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 50 55 60 65 70 75 80 85 90 95 100 105 110 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60c3 IXGH48N60C3 ixgp48n60c3 ixys ref: g_48n60c3(5d)1-23-09-b fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 110 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds 15 16 17 18 19 20 21 22 23 24 25 26 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 400v 25oc < t j < 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 80 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 17 18 19 20 21 22 23 24 25 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 400v i c = 30a i c = 60a i c = 15a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 r g - ohms t r - nanoseconds 15 20 25 30 35 40 45 50 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 60a i c = 15a, 30a
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